NBT SRAMs

NBT SRAMs

GSI Technology's No Bus Turnaround (NBT™) product portfolio is the largest in the industry with six different densities in x18, 32, 36 and 72 bit widths. Our NBT SRAMs provide the fastest clock rates and lowest power of any in the world.


NBT SRAMs are synchronous, burst-capable memories with a simplified interface that is designed to use a data bus's maximum bandwidth. NBT devices do not require "turnaround" cycles (idle clock cycles between a read and write operation). NBT SRAMs are used in networking, industrial, automotive and medical imaging applications where a mid-range performance point (typically a 333-166 MHz clock rate) is required.

 

Features

  • NBT functionality allows zero wait read-write-read bus utilization
  • Fully pin-compatible NtRAM™, NoBL™, and ZBT™ SRAMs
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available


Name Density Config. Cycle Time (MHz) Access Time (ns) Voltage (V) Package 6/6 RoHS Temp Special Features Status
NBT SRAMs
View 1616 products 		4Mb, 9Mb, 18Mb, 36Mb, 72Mb, 144Mb, 288Mb x18, x32, x36, x72 Up to 400 As Low As 4 1.8, 2.5, 3.3 165 BGA, 100 TQFP, 209 BGA, 119 BGA yes, no Mil, Ind, Comm See Individual Products Production, Active
Part Number Density Configuration Cycle Time (MHz) Access Time (ns) Voltage (V) Package 6/6 RoHS Temp Special Features Status
GS8321Z32AD-200 36Mb x32 200 6.5 2.5, 3.3 165 BGA no Comm JTAG Production
GS8321Z32AD-150 36Mb x32 150 7.5 2.5, 3.3 165 BGA no Comm JTAG Production
GS8321Z36AD-400 36Mb x36 400 4 2.5, 3.3 165 BGA no Comm JTAG Production
GS8321Z36AD-375 36Mb x36 375 4.2 2.5, 3.3 165 BGA no Comm JTAG Production
GS8321Z36AD-333 36Mb x36 333 4.5 2.5, 3.3 165 BGA no Comm JTAG Production
GS8321Z36AD-250 36Mb x36 250 5.5 2.5, 3.3 165 BGA no Comm JTAG Production
GS8321Z36AD-200 36Mb x36 200 6.5 2.5, 3.3 165 BGA no Comm JTAG Production
GS8321Z36AD-150 36Mb x36 150 7.5 2.5, 3.3 165 BGA no Comm JTAG Production
GS8321Z18AD-400I 36Mb x18 400 4 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z18AD-375I 36Mb x18 375 4.2 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z18AD-333I 36Mb x18 333 4.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z18AD-250I 36Mb x18 250 5.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z18AD-200I 36Mb x18 200 6.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z18AD-150I 36Mb x18 150 7.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z32AD-400I 36Mb x32 400 4 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z32AD-375I 36Mb x32 375 4.2 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z32AD-333I 36Mb x32 333 4.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z32AD-250I 36Mb x32 250 5.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z32AD-200I 36Mb x32 200 6.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z32AD-150I 36Mb x32 150 7.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z36AD-400I 36Mb x36 400 4 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z36AD-375I 36Mb x36 375 4.2 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z36AD-333I 36Mb x36 333 4.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z36AD-250I 36Mb x36 250 5.5 2.5, 3.3 165 BGA no Ind JTAG Production
GS8321Z36AD-200I 36Mb x36 200 6.5 2.5, 3.3 165 BGA no Ind JTAG Production

Features

  • NBT functionality allows zero wait read-write-read bus utilization
  • Fully pin-compatible NtRAM™, NoBL™, and ZBT™ SRAMs
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available

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