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NBT SRAMs

GSI Technology's No Bus Turnaround (NBT) product portfolio is the largest in the industry with six different densities in x18, 32, 36 and 72 bit widths. Our NBT SRAMs provide the fastest clock rates and lowest power of any in the world.


NBT SRAMs are synchronous, burst-capable memories with a simplified interface that is designed to use a data bus's maximum bandwidth. NBT devices do not require "turnaround" cycles (idle clock cycles between a read and write operation). NBT SRAMs are used in networking, industrial, automotive and medical imaging applications where a mid-range performance point (typically a 333-166 MHz clock rate) is required.

 

Features

  • NBT functionality allows zero wait read-write-read bus utilization
  • Fully pin-compatible NtRAM™, NoBL™, and ZBT™ SRAMs
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available


Name Density Config. Cycle Time (MHz) Access Time (ns) Voltage (V) Package 6/6 RoHS Temp Special Features Status
NBT SRAMs
View 1616 products
4Mb, 9Mb, 18Mb, 36Mb, 72Mb, 144Mb, 288Mb x18, x32, x36, x72 Up to 400 As Low As 4 1.8, 2.5, 3.3 165 BGA, 100 TQFP, 209 BGA, 119 BGA yes, no Mil, Ind, Comm See Individual Products Production, Active
Part Number Density Configuration Cycle Time (MHz) Access Time (ns) Voltage (V) Package 6/6 RoHS Temp Special Features Status
GS8640Z18GT-167V 72Mb x18 167 8 1.8, 2.5 100 TQFP yes Comm none Production
GS8640Z36GT-250V 72Mb x36 250 6.5 1.8, 2.5 100 TQFP yes Comm none Production
GS8640Z36GT-200V 72Mb x36 200 7.5 1.8, 2.5 100 TQFP yes Comm none Production
GS8640Z36GT-167V 72Mb x36 167 8 1.8, 2.5 100 TQFP yes Comm none Production
GS8640Z18GT-250IV 72Mb x18 250 6.5 1.8, 2.5 100 TQFP yes Ind none Production
GS8640Z18GT-200IV 72Mb x18 200 7.5 1.8, 2.5 100 TQFP yes Ind none Production
GS8640Z18GT-167IV 72Mb x18 167 8 1.8, 2.5 100 TQFP yes Ind none Production
GS8640Z36GT-250IV 72Mb x36 250 6.5 1.8, 2.5 100 TQFP yes Ind none Production
GS8640Z36GT-200IV 72Mb x36 200 7.5 1.8, 2.5 100 TQFP yes Ind none Production
GS8640Z36GT-167IV 72Mb x36 167 8 1.8, 2.5 100 TQFP yes Ind none Production
GS8640FZ18GT-250V 72Mb x18 250 6.5 1.8, 2.5 100 TQFP yes Comm none Production
GS8640FZ18GT-200V 72Mb x18 200 7.5 1.8, 2.5 100 TQFP yes Comm none Production
GS8640FZ18GT-167V 72Mb x18 167 8 1.8, 2.5 100 TQFP yes Comm none Production
GS8640FZ36GT-250V 72Mb x36 250 6.5 1.8, 2.5 100 TQFP yes Comm none Production
GS8640FZ36GT-200V 72Mb x36 200 7.5 1.8, 2.5 100 TQFP yes Comm none Production
GS8640FZ36GT-167V 72Mb x36 167 8 1.8, 2.5 100 TQFP yes Comm none Production
GS8640FZ18GT-250IV 72Mb x18 250 6.5 1.8, 2.5 100 TQFP yes Ind none Production
GS8640FZ18GT-200IV 72Mb x18 200 7.5 1.8, 2.5 100 TQFP yes Ind none Production
GS8640FZ18GT-167IV 72Mb x18 167 8 1.8, 2.5 100 TQFP yes Ind none Production
GS8640FZ36GT-250IV 72Mb x36 250 6.5 1.8, 2.5 100 TQFP yes Ind none Production
GS8640FZ36GT-200IV 72Mb x36 200 7.5 1.8, 2.5 100 TQFP yes Ind none Production
GS8640FZ36GT-167IV 72Mb x36 167 8 1.8, 2.5 100 TQFP yes Ind none Production
GS8642Z18B-250V 72Mb x18 250 6.5 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive Production
GS8642Z18B-200V 72Mb x18 200 7.5 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive Production
GS8642Z18B-167V 72Mb x18 167 8 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive Production

Features

  • NBT functionality allows zero wait read-write-read bus utilization
  • Fully pin-compatible NtRAM™, NoBL™, and ZBT™ SRAMs
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available