SyncBurst SRAMs

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SyncBurst SRAMs

GSI offers the broadest portfolio of Synchronous Burst (SyncBurst™) SRAMs in the industry. Our SyncBurst SRAMs provide the fastest clock rates and lowest power of any in the world.

SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. SyncBurst SRAMs are used in networking, industrial, automotive and medical imaging applications where a mid-range performance point (typically a 333-166 MHz clock rate) is required.

 

Features

  • Industry-standard Synchronous Burst Interface
  • ZQ mode pin for user-selectable high/low output drive
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available


Name Density Config. Cycle Time (MHz) Access Time (ns) Voltage (V) Package 6/6 RoHS Temp Special Features Status
SyncBurst SRAMs
View 2482 products 		4Mb, 9Mb, 18Mb, 36Mb, 72Mb, 144Mb, 288Mb x18, x32, x36, x72 Up to 400 As Low As 4 1.8, 2.5, 3.3 165 BGA, 100 TQFP, 209 BGA, 119 BGA yes, no Mil, Ind, Comm See Individual Products Production, Active
Part Number Density Configuration Cycle Time (MHz) Access Time (ns) Voltage (V) Package 6/6 RoHS Temp Special Features Status
GS832132AGD-250 36Mb x32 250 5.5 2.5, 3.3 165 BGA yes Comm SCD, JTAG Production
GS832132AGD-200 36Mb x32 200 6.5 2.5, 3.3 165 BGA yes Comm SCD, JTAG Production
GS832132AGD-150 36Mb x32 150 7.5 2.5, 3.3 165 BGA yes Comm SCD, JTAG Production
GS832136AGD-400 36Mb x36 400 4 2.5, 3.3 165 BGA yes Comm SCD, JTAG Production
GS832136AGD-375 36Mb x36 375 4.2 2.5, 3.3 165 BGA yes Comm SCD, JTAG Production
GS832136AGD-333 36Mb x36 333 4.5 2.5, 3.3 165 BGA yes Comm SCD, JTAG Production
GS832136AGD-250 36Mb x36 250 5.5 2.5, 3.3 165 BGA yes Comm SCD, JTAG Production
GS832136AGD-200 36Mb x36 200 6.5 2.5, 3.3 165 BGA yes Comm SCD, JTAG Production
GS832136AGD-150 36Mb x36 150 7.5 2.5, 3.3 165 BGA yes Comm SCD, JTAG Production
GS8321E18AGD-400 36Mb x18 400 4 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E18AGD-375 36Mb x18 375 4.2 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E18AGD-333 36Mb x18 333 4.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E18AGD-250 36Mb x18 250 5.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E18AGD-200 36Mb x18 200 6.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E18AGD-150 36Mb x18 150 7.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E32AGD-400 36Mb x32 400 4 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E32AGD-375 36Mb x32 375 4.2 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E32AGD-333 36Mb x32 333 4.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E32AGD-250 36Mb x32 250 5.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E32AGD-200 36Mb x32 200 6.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E32AGD-150 36Mb x32 150 7.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E36AGD-400 36Mb x36 400 4 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E36AGD-375 36Mb x36 375 4.2 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E36AGD-333 36Mb x36 333 4.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production
GS8321E36AGD-250 36Mb x36 250 5.5 2.5, 3.3 165 BGA yes Comm DCD, JTAG Production

Features

  • Industry-standard Synchronous Burst Interface
  • ZQ mode pin for user-selectable high/low output drive
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available

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