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SyncBurst SRAMs

GSI offers the broadest portfolio of Synchronous Burst (SyncBurst) SRAMs in the industry. Our SyncBurst SRAMs provide the fastest clock rates and lowest power of any in the world.

SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. SyncBurst SRAMs are used in networking, industrial, automotive and medical imaging applications where a mid-range performance point (typically a 333-166 MHz clock rate) is required.

 

Features

  • Industry-standard Synchronous Burst Interface
  • ZQ mode pin for user-selectable high/low output drive
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available


Name Density Config. Cycle Time (MHz) Access Time (ns) Voltage (V) Package 6/6 RoHS Temp Special Features Status
SyncBurst SRAMs
View 2482 products
4Mb, 9Mb, 18Mb, 36Mb, 72Mb, 144Mb, 288Mb x18, x32, x36, x72 Up to 400 As Low As 4 1.8, 2.5, 3.3 165 BGA, 100 TQFP, 209 BGA, 119 BGA yes, no Mil, Ind, Comm See Individual Products Production, Active
Part Number Density Configuration Cycle Time (MHz) Access Time (ns) Voltage (V) Package 6/6 RoHS Temp Special Features Status
GS864032GT-167V 72Mb x32 167 8 1.8, 2.5 100 TQFP yes Comm SCD Production
GS864036GT-250V 72Mb x36 250 6.5 1.8, 2.5 100 TQFP yes Comm SCD Production
GS864036GT-200V 72Mb x36 200 7.5 1.8, 2.5 100 TQFP yes Comm SCD Production
GS864036GT-167V 72Mb x36 167 8 1.8, 2.5 100 TQFP yes Comm SCD Production
GS8640E18GT-250V 72Mb x18 250 6.5 1.8, 2.5 100 TQFP yes Comm DCD Production
GS8640E18GT-200V 72Mb x18 200 7.5 1.8, 2.5 100 TQFP yes Comm DCD Production
GS8640E18GT-167V 72Mb x18 167 8 1.8, 2.5 100 TQFP yes Comm DCD Production
GS8640E32GT-250V 72Mb x32 250 6.5 1.8, 2.5 100 TQFP yes Comm DCD Production
GS8640E32GT-200V 72Mb x32 200 7.5 1.8, 2.5 100 TQFP yes Comm DCD Production
GS8640E32GT-167V 72Mb x32 167 8 1.8, 2.5 100 TQFP yes Comm DCD Production
GS8640E36GT-250V 72Mb x36 250 6.5 1.8, 2.5 100 TQFP yes Comm DCD Production
GS8640E36GT-200V 72Mb x36 200 7.5 1.8, 2.5 100 TQFP yes Comm DCD Production
GS8640E36GT-167V 72Mb x36 167 8 1.8, 2.5 100 TQFP yes Comm DCD Production
GS864218B-250V 72Mb x18 250 6.5 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864218B-200V 72Mb x18 200 7.5 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864218B-167V 72Mb x18 167 8 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864236B-250V 72Mb x36 250 6.5 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864236B-200V 72Mb x36 200 7.5 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864236B-167V 72Mb x36 167 8 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864272C-250V 72Mb x72 250 6.5 1.8, 2.5 209 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864272C-200V 72Mb x72 200 7.5 1.8, 2.5 209 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864272C-167V 72Mb x72 167 8 1.8, 2.5 209 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864218GB-250V 72Mb x18 250 6.5 1.8, 2.5 119 BGA no Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864218GB-200V 72Mb x18 200 7.5 1.8, 2.5 119 BGA yes Comm JTAG, FLXDrive, SCD/DCD Select Production
GS864218GB-167V 72Mb x18 167 8 1.8, 2.5 119 BGA yes Comm JTAG, FLXDrive, SCD/DCD Select Production

Features

  • Industry-standard Synchronous Burst Interface
  • ZQ mode pin for user-selectable high/low output drive
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available